PZT751T1
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- Mfr.Part #
- PZT751T1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS SS HC PNP 2A 60V SOT223
- Stock
- 12,227
- In Stock ：
- 12,227
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 75MHz
- Max Collector Current :
- 2A
- Published :
- 2005
- Height :
- 1.57mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 9 Weeks
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 75MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 4
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Base Part Number :
- PZT751
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Terminal Position :
- Dual
- Length :
- 6.5mm
- Transistor Type :
- PNP
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Voltage - Rated DC :
- -60V
- Terminal Form :
- Gull wing
- Weight :
- 4.535924g
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- yes
- hFE Min :
- 75
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Transition Frequency :
- 75MHz
- Current Rating :
- 2A
- REACH SVHC :
- No SVHC
- Width :
- 3.5mm
- Power Dissipation :
- 800mW
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- TO-261-4, TO-261AA
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 60V
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 500mV
- Max Power Dissipation :
- 800mW
- Datasheets
- PZT751T1
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PZT751T1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 75MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 2A volts.
PZT751T1G Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
PZT751T1G Applications
There are a lot of ON Semiconductor
PZT751T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| PZT751T1G | onsemi | 1,870 | TRANS PNP 60V 2A SOT223 |
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