PUMB30,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Number of Elements :

2

Transistor Application :

AMPLIFIER

Additional Feature :

BUILT IN BIAS RESISTOR

Transistor Type :

2 PNP - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

2.2k Ω

Current - Collector Cutoff (Max) :

1μA

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

HTS Code :

8541.21.00.95

Power - Max :

300mW

Number of Terminations :

6

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

MB30

ECCN Code :

EAR99

Pin Count :

6

Polarity/Channel Type :

PNP

Published :

2009

Voltage - Collector Emitter Breakdown (Max) :

50V

JESD-30 Code :

R-PDSO-G6

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Current - Collector (Ic) (Max) :

100mA

Terminal Form :

Gull wing