PUMB2,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Number of Elements :

2

Power - Max :

300mW

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

HTS Code :

8541.21.00.95

Transistor Application :

SWITCHING

Published :

2002

Resistor - Base (R1) :

47k Ω

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Current - Collector (Ic) (Max) :

100mA

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-TSSOP, SC-88, SOT-363

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Peak Reflow Temperature (Cel) :

260

Transistor Type :

2 PNP - Pre-Biased (Dual)

Surface Mount :

yes

Transistor Element Material :

SILICON

Base Part Number :

MB2

Polarity :

PNP

Number of Terminations :

6

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

30

Current - Collector Cutoff (Max) :

1μA

Resistor - Emitter Base (R2) :

47k Ω

Terminal Form :

Gull wing

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

50V

Number of Pins :

6

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)