PMZB370UNE,315

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

FET Type :

N-Channel

Number of Terminations :

3

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

11 ns

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

78pF @ 25V

Package / Case :

3-XFDFN

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

490m Ω @ 500mA, 4.5V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Drain Current-Max (Abs) (ID) :

0.9A

Published :

2012

Fall Time (Typ) :

27 ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Max Dual Supply Voltage :

30V

Drain-source On Resistance-Max :

0.49Ohm

Vgs(th) (Max) @ Id :

1.05V @ 250μA

Case Connection :

DRAIN

Factory Lead Time :

20 Weeks

Gate Charge (Qg) (Max) @ Vgs :

1.16nC @ 15V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

900mA

Gate to Source Voltage (Vgs) :

8V

Transistor Element Material :

SILICON

Vgs (Max) :

±8V

Number of Elements :

1

Terminal Position :

BOTTOM

JESD-609 Code :

e3

Power Dissipation-Max :

360mW Ta 2.7W Tc

Radiation Hardening :

No

Pin Count :

3

Number of Pins :

3

Rise Time :

9ns

Power Dissipation :

715mW

Turn-Off Delay Time :

54 ns