PMZ600UNELYL

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.7W Tc

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

600mA Tc

Vgs(th) (Max) @ Id :

950mV @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Transistor Application :

SWITCHING

FET Feature :

Standard

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

3Ohm

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

21.3pF @ 10V

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SC-101, SOT-883

JESD-30 Code :

R-PBCC-N3

Published :

2016

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

0.6A

Terminal Form :

NO LEAD

DS Breakdown Voltage-Min :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

620m Ω @ 600mA, 4.5V

Case Connection :

DRAIN

FET Type :

N-Channel

Number of Elements :

1

Reference Standard :

IEC-60134

Continuous Drain Current (ID) :

600mA

Number of Terminations :

3

Mounting Type :

Surface Mount