PMZ550UNEYL

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

950mV @ 250μA

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

IEC-60134

Continuous Drain Current (ID) :

590mA

Factory Lead Time :

8 Weeks

Terminal Position :

BOTTOM

Current - Continuous Drain (Id) @ 25°C :

590mA Ta

Drain Current-Max (Abs) (ID) :

0.59A

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±8V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.67Ohm

Gate Charge (Qg) (Max) @ Vgs :

1.1nC @ 4.5V

JESD-30 Code :

R-PBCC-N3

Packaging :

Cut Tape (CT)

Published :

2015

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Form :

NO LEAD

Pin Count :

3

Package / Case :

SC-101, SOT-883

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

30.3pF @ 15V

Power Dissipation-Max :

310mW Ta 1.67W Tc

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

670m Ω @ 590mA, 4.5V