PMV90ENER

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

72m Ω @ 3A, 10V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

3A Ta

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3A

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.072Ohm

Terminal Form :

Gull wing

Surface Mount :

yes

JEDEC-95 Code :

TO-236AB

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 15V

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±20V

Reference Standard :

IEC-60134

FET Type :

N-Channel

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

460mW Ta

Factory Lead Time :

4 Weeks

Published :

2016

JESD-30 Code :

R-PDSO-G3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED