PMV75UP,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

12V

Power Dissipation-Max :

490mW Ta 5W Tc

Turn-Off Delay Time :

120 ns

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

2.5A

Published :

2014

Turn On Delay Time :

6 ns

DS Breakdown Voltage-Min :

20V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Transistor Element Material :

SILICON

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

102m Ω @ 2.5A, 4.5V

Factory Lead Time :

4 Weeks

Vgs (Max) :

±12V

Number of Pins :

3

Drain-source On Resistance-Max :

0.102Ohm

Transistor Application :

SWITCHING

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 10V

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

20V

FET Type :

P-Channel

Terminal Form :

Gull wing

Number of Elements :

1

Rise Time :

14ns

Fall Time (Typ) :

50 ns

Operating Temperature :

-55°C~150°C TJ