PMV65XPEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

2.8A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

78m Ω @ 2.8A, 4.5V

Drain-source On Resistance-Max :

0.078Ohm

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-236AB

JESD-609 Code :

e3

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

618pF @ 10V

JESD-30 Code :

R-PDSO-G3

Drain to Source Voltage (Vdss) :

20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±12V

Mount :

Surface Mount

Pin Count :

3

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Power Dissipation-Max :

480mW Ta 6.25W Tc

Transistor Application :

SWITCHING

Reference Standard :

AEC-Q101; IEC-60134

Operating Temperature :

-55°C~150°C TJ

Packaging :

Cut Tape (CT)

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Factory Lead Time :

4 Weeks