PMV65XP/MIR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 4.5V

JEDEC-95 Code :

TO-236AB

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

900mV @ 250μA

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Mounting Type :

Surface Mount

Power Dissipation-Max :

480mW Ta 4.17W Tc

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain-source On Resistance-Max :

0.076Ohm

Reference Standard :

IEC-60134

Number of Terminations :

3

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

744pF @ 20V

Vgs (Max) :

±12V

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Pin Count :

3

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G3

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

3.9A

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

74m Ω @ 2.8A, 4.5V