PMV65UNER

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

N-Channel

Factory Lead Time :

4 Weeks

Published :

2016

Rds On (Max) @ Id, Vgs :

73m Ω @ 2.8A, 4.5V

Power Dissipation-Max :

490mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

291pF @ 10V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Drain-source On Resistance-Max :

0.073Ohm

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Vgs (Max) :

±8V

JESD-30 Code :

R-PDSO-G3

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Terminations :

3

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-236AB

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

2.8A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

IEC-60134

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant