PMV213SN,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Published :

1997

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

N-Channel

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

250m Ω @ 500mA, 10V

HTS Code :

8541.29.00.75

Terminal Position :

Dual

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 20V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Pin Count :

3

Continuous Drain Current (ID) :

1.9A

DS Breakdown Voltage-Min :

100V

Power Dissipation :

2W

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Number of Elements :

1

JESD-609 Code :

e3

Power Dissipation-Max :

280mW Tj

Width :

3.05mm

Factory Lead Time :

4 Weeks

Drain-source On Resistance-Max :

0.25Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING