PMV20ENR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 10V

Power Dissipation-Max :

510mW Ta 6.94W Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Turn-Off Delay Time :

9 ns

Contact Plating :

Tin

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 15V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Rise Time :

17ns

Mount :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

6A

Rds On (Max) @ Id, Vgs :

21m Ω @ 6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

8 ns

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Turn On Delay Time :

9 ns

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.021Ohm

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Published :

2014

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Drain Current-Max (Abs) (ID) :

6A

Number of Terminations :

3