PMV16XNR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

6.8A

FET Type :

N-Channel

Reference Standard :

IEC-60134

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

6.8A Ta

Drain-source On Resistance-Max :

0.02Ohm

Number of Terminations :

3

Number of Elements :

1

Vgs (Max) :

±12V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 10V

Power Dissipation-Max :

510mW Ta 6.94W Tc

Gate Charge (Qg) (Max) @ Vgs :

20.2nC @ 4.5V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

DS Breakdown Voltage-Min :

20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

JEDEC-95 Code :

TO-236AB

Packaging :

Cut Tape (CT)

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Terminal Position :

Dual

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G3

Published :

2017

Rds On (Max) @ Id, Vgs :

20m Ω @ 6.8A, 4.5V

Pin Count :

3

Mounting Type :

Surface Mount