PMV160UPVL

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

365pF @ 10V

Terminal Position :

Dual

Surface Mount :

yes

Power Dissipation-Max :

335mW Ta

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

950mV @ 250μA

Drain Current-Max (Abs) (ID) :

1.2A

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

210m Ω @ 1.2A, 4.5V

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Number of Terminations :

3

DS Breakdown Voltage-Min :

20V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Transistor Element Material :

SILICON

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Factory Lead Time :

4 Weeks

Reference Standard :

IEC-60134

JEDEC-95 Code :

TO-236AB

Drain-source On Resistance-Max :

0.21Ohm