PMV130ENEAR

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-G3

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 20V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

120m Ω @ 1.5A, 10V

Resistance :

95mOhm

Reference Standard :

AEC-Q101; IEC-60134

Power Dissipation-Max :

460mW Ta 5W Tc

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

40V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

40V

Gate Charge (Qg) (Max) @ Vgs :

3.6nC @ 10V

Packaging :

Cut Tape (CT)

Package / Case :

TO-236-3, SC-59, SOT-23-3

JEDEC-95 Code :

TO-236AB

FET Type :

N-Channel

Number of Terminations :

3

Continuous Drain Current (ID) :

2.1A

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Operating Mode :

ENHANCEMENT MODE