PMV130ENEA/DG/B2R
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- Mfr.Part #
- PMV130ENEA/DG/B2R
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 2.1A TO236AB
- Stock
- 43,791
- In Stock ：
- 43,791
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Ta
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 1.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 3.6nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 40V
- Series :
- Automotive, AEC-Q101
- Power Dissipation-Max :
- 5W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 170pF @ 20V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Datasheets
- PMV130ENEA/DG/B2R
N-Channel Tape & Reel (TR) 120m Ω @ 1.5A, 10V ±20V 170pF @ 20V 3.6nC @ 10V 40V TO-236-3, SC-59, SOT-23-3
PMV130ENEA/DG/B2R Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 170pF @ 20V.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
PMV130ENEA/DG/B2R Features
a 40V drain to source voltage (Vdss)
PMV130ENEA/DG/B2R Applications
There are a lot of Nexperia USA Inc.
PMV130ENEA/DG/B2R applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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