PMV120ENEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

2.1A

JEDEC-95 Code :

TO-236AB

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

123m Ω @ 2.1A, 10V

Transistor Element Material :

SILICON

Published :

2016

Mounting Type :

Surface Mount

Pin Count :

3

Factory Lead Time :

4 Weeks

Drain-source On Resistance-Max :

0.123Ohm

Power Dissipation-Max :

513mW Ta 6.4W Tc

Series :

Automotive, AEC-Q101

Reference Standard :

AEC-Q101; IEC-60134

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 30V

Terminal Position :

Dual

Additional Feature :

LOGIC LEVEL COMPATIBLE

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-30 Code :

R-PDSO-G3

Vgs (Max) :

±20V

Mount :

Surface Mount

Terminal Form :

Gull wing

FET Type :

N-Channel