PMV120ENEAR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Published :

2016

Transistor Element Material :

SILICON

Number of Elements :

1

Series :

Automotive, AEC-Q101

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reference Standard :

AEC-Q101; IEC-60134

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

275pF @ 30V

Drain-source On Resistance-Max :

0.123Ohm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Vgs(th) (Max) @ Id :

2.7V @ 250μA

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 10V

Rds On (Max) @ Id, Vgs :

123m Ω @ 2.1A, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PDSO-G3

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

60V

JEDEC-95 Code :

TO-236AB

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Mount :

Surface Mount

Terminal Position :

Dual

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

2.1A

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

60V

FET Type :

N-Channel

Power Dissipation-Max :

513mW Ta 6.4W Tc

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED