PMV117EN,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-236AB

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

117m Ω @ 500mA, 10V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Series :

TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Published :

2005

JESD-609 Code :

e3

Number of Terminations :

3

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

HTS Code :

8541.29.00.75

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

2.5A

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Drain-source On Resistance-Max :

0.19Ohm

Power Dissipation-Max :

830mW Tc

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

147pF @ 10V

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-65°C~150°C TJ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 1mA

JESD-30 Code :

R-PDSO-G3