PMT560ENEAX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.715Ohm

Package / Case :

TO-261-4, TO-261AA

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

4.4nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

112pF @ 50V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Pin Count :

4

DS Breakdown Voltage-Min :

100V

Drain Current-Max (Abs) (ID) :

1.1A

Rds On (Max) @ Id, Vgs :

715m Ω @ 1.1A, 10V

Power Dissipation-Max :

750mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Position :

Dual

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G4

Configuration :

SINGLE WITH BUILT-IN DIODE

Reference Standard :

AEC-Q101; IEC-60134

Number of Elements :

1

FET Type :

N-Channel

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Surface Mount :

yes