PMT280ENEAX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

385m Ω @ 1.5A, 10V

Drain Current-Max (Abs) (ID) :

1.5A

Drain-source On Resistance-Max :

0.385Ohm

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 50V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Reference Standard :

AEC-Q101; IEC-60134

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Number of Terminations :

4

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2016

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

770mW Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

N-Channel

Pin Count :

4

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-261-4, TO-261AA

JESD-30 Code :

R-PDSO-G4