PMR370XN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

440m Ω @ 200mA, 4.5V

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.84A

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

840mA Tc

Pin Count :

3

JESD-30 Code :

R-PDSO-G3

Input Capacitance (Ciss) (Max) @ Vds :

37pF @ 25V

Series :

TrenchMOS™

Number of Terminations :

3

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Package / Case :

SC-75, SOT-416

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

0.65nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.29.00.75

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

Published :

1997

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

530mW Tc

Number of Elements :

1

Vgs (Max) :

±12V

Drain-source On Resistance-Max :

0.44Ohm