PMR280UN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

45pF @ 20V

Surface Mount :

yes

Series :

TrenchMOS™

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G3

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Published :

1997

Vgs (Max) :

±8V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Rds On (Max) @ Id, Vgs :

340m Ω @ 200mA, 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Elements :

1

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.34Ohm

Terminal Position :

Dual

HTS Code :

8541.29.00.75

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

980mA Tc

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SC-75, SOT-416

Gate Charge (Qg) (Max) @ Vgs :

0.89nC @ 4.5V

Power Dissipation-Max :

530mW Tc

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.98A

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99