PMPB95ENEAX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.105Ohm

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

DS Breakdown Voltage-Min :

80V

FET Type :

N-Channel

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Package / Case :

6-UDFN Exposed Pad

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

80V

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.8A, 10V

Published :

2013

Transistor Element Material :

SILICON

Mount :

Surface Mount

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

19.3 mJ

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

504pF @ 40V

Rise Time :

4ns

Power Dissipation-Max :

1.6W Ta 15.6W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

15 ns

Transistor Application :

SWITCHING

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

14.9nC @ 10V

Continuous Drain Current (ID) :

2.8A

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

7 ns

Pulsed Drain Current-Max (IDM) :

11.2A

JESD-30 Code :

S-PDSO-N6

Number of Terminations :

6

Reference Standard :

AEC-Q101; IEC-60134

Number of Elements :

1

Case Connection :

DRAIN

Vgs (Max) :

±20V

Turn On Delay Time :

5 ns

Radiation Hardening :

No