PMPB85ENEAX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

10.5 ns

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Reference Standard :

AEC-Q101; IEC-60134

JESD-30 Code :

S-PDSO-N6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

3.5ns

Input Capacitance (Ciss) (Max) @ Vds :

305pF @ 30V

Power Dissipation-Max :

1.6W Ta 15.6W Tc

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

12.6 mJ

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Continuous Drain Current (ID) :

3A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Turn On Delay Time :

4 ns

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Package / Case :

6-UDFN Exposed Pad

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

4.5 ns

Drain-source On Resistance-Max :

0.095Ohm

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 10V

Rds On (Max) @ Id, Vgs :

95m Ω @ 3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

6

Pin Count :

6

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

3A

Terminal Position :

Dual

Number of Elements :

1

Published :

2013

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

12A