PMPB85ENEA/FX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

Automotive, AEC-Q101

Drain Current-Max (Abs) (ID) :

3A

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

4.4A Ta

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

8 Weeks

Package / Case :

6-UDFN Exposed Pad

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Reference Standard :

AEC-Q101; IEC-60134

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

12A

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

305pF @ 30V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

95m Ω @ 3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 10V

Transistor Element Material :

SILICON

Pin Count :

6

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Power Dissipation-Max :

1.6W Ta

JESD-30 Code :

S-PDSO-N6

Avalanche Energy Rating (Eas) :

12.6 mJ

Terminal Position :

Dual

Terminal Form :

NO LEAD

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.095Ohm