PMPB85ENEA/FX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

12.6 mJ

Drain Current-Max (Abs) (ID) :

3A

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Surface Mount :

yes

Terminal Position :

Dual

Factory Lead Time :

8 Weeks

Drain-source On Resistance-Max :

0.095Ohm

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

12A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Pin Count :

6

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

95m Ω @ 3A, 10V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

305pF @ 30V

Current - Continuous Drain (Id) @ 25°C :

4.4A Ta

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 10V

JESD-30 Code :

S-PDSO-N6

Reference Standard :

AEC-Q101; IEC-60134

DS Breakdown Voltage-Min :

60V

Package / Case :

6-UDFN Exposed Pad

Series :

Automotive, AEC-Q101

Case Connection :

DRAIN

Power Dissipation-Max :

1.6W Ta

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

6