PMPB55XNEAX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

3.8A

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Number of Terminations :

6

JESD-30 Code :

S-PDSO-N6

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.072Ohm

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

72m Ω @ 3.8A, 4.5V

Package / Case :

6-UDFN Exposed Pad

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.25V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Surface Mount :

yes

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

255pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Reference Standard :

AEC-Q101; IEC-60134

Power Dissipation-Max :

550mW Ta

Pin Count :

6