PMPB48EP,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 15V

Terminal Form :

NO LEAD

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.7A, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

8 Weeks

Pin Count :

6

Pulsed Drain Current-Max (IDM) :

19A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Max Dual Supply Voltage :

-30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Package / Case :

6-UDFN Exposed Pad

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

4.7A

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

4.7A Ta

Number of Pins :

6

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Surface Mount :

yes

Drain-source On Resistance-Max :

0.05Ohm

Number of Terminations :

6