PMPB43XPE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

-20V

Pin Count :

6

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Number of Terminations :

6

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

900mV @ 250μA

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Elements :

1

FET Type :

P-Channel

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2012

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 10V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

12A

Drain-source On Resistance-Max :

0.048Ohm

Package / Case :

6-UDFN Exposed Pad

Case Connection :

DRAIN

Continuous Drain Current (ID) :

5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

23.4nC @ 4.5V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

Rds On (Max) @ Id, Vgs :

48m Ω @ 5A, 4.5V

Drain Current-Max (Abs) (ID) :

5A