PMPB33XP,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1575pF @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2012

Package / Case :

6-UDFN Exposed Pad

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Pin Count :

6

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

22A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current - Continuous Drain (Id) @ 25°C :

5.5A Ta

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

6

Vgs(th) (Max) @ Id :

900mV @ 250μA

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

37m Ω @ 5.5A, 4.5V

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Continuous Drain Current (ID) :

5.5A

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 4.5V

Number of Elements :

1

Drain-source On Resistance-Max :

0.037Ohm

Surface Mount :

yes

Terminal Position :

Dual

Number of Terminations :

6

Mounting Type :

Surface Mount