PMPB33XN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Continuous Drain Current (ID) :

4.3A

Power Dissipation-Max :

1.5W Ta 8.3W Tc

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Rise Time :

17ns

Published :

2012

Number of Terminations :

6

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

7.6nC @ 4.5V

Factory Lead Time :

8 Weeks

Turn-Off Delay Time :

21 ns

Gate to Source Voltage (Vgs) :

12V

Terminal Finish :

Tin (Sn)

Pin Count :

6

Pulsed Drain Current-Max (IDM) :

17A

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.047Ohm

Package / Case :

6-UDFN Exposed Pad

Mounting Type :

Surface Mount

Fall Time (Typ) :

20 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

505pF @ 15V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Max Dual Supply Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Surface Mount :

yes

Turn On Delay Time :

6 ns

Rds On (Max) @ Id, Vgs :

47m Ω @ 4.3A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Element Material :

SILICON