PMPB29XPE,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

900mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2970pF @ 10V

JESD-609 Code :

e3

Published :

2012

Number of Channels :

1

Element Configuration :

Single

Max Dual Supply Voltage :

-20V

Turn On Delay Time :

12 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

5A

Drain to Source Breakdown Voltage :

-20V

Rise Time :

53ns

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

Pin Count :

6

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Fall Time (Typ) :

48 ns

FET Type :

P-Channel

Package / Case :

6-UDFN Exposed Pad

Vgs (Max) :

±12V

Surface Mount :

yes

Terminal Position :

Dual

Contact Plating :

Tin

Continuous Drain Current (ID) :

5A

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.038Ohm

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Turn-Off Delay Time :

91 ns

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

32.5m Ω @ 5A, 4.5V

Gate to Source Voltage (Vgs) :

-680mV

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V