PMPB27EP,115
- Mfr.Part #
- PMPB27EP,115
- Manufacturer
- Nexperia
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 6.1A DFN2020MD-6
- Stock
- 6,432
- In Stock :
- 6,432
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Terminal Form :
- NO LEAD
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- -30V
- Number of Channels :
- 1
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-609 Code :
- e3
- Number of Terminations :
- 6
- Continuous Drain Current (ID) :
- 6.1A
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 6.1A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 6.1A Ta
- Rise Time :
- 31ns
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Power Dissipation :
- 1.7W
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 28 ns
- Number of Pins :
- 6
- Input Capacitance (Ciss) (Max) @ Vds :
- 1570pF @ 15V
- Pin Count :
- 6
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 6-UDFN Exposed Pad
- Fall Time (Typ) :
- 19 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.029Ohm
- Drain to Source Voltage (Vdss) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 25A
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Drain to Source Breakdown Voltage :
- -30V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 1.7W Ta 12.5W Tc
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2012
- Number of Elements :
- 1
- Turn On Delay Time :
- 10 ns
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- PMPB27EP,115
PMPB27EP,115 Documents

P-Channel Tape & Reel (TR) 29m Ω @ 6.1A, 10V ±20V 1570pF @ 15V 45nC @ 10V 30V 6-UDFN Exposed Pad
PMPB27EP,115 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1570pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -30V.As a result of its turn-off delay time, which is 28 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 25A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by -30V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
PMPB27EP,115 Features
a continuous drain current (ID) of 6.1A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 25A.
a 30V drain to source voltage (Vdss)
PMPB27EP,115 Applications
There are a lot of Nexperia USA Inc.
PMPB27EP,115 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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