PMPB27EP,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

28 ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

6.1A Ta

Terminal Form :

NO LEAD

Terminal Position :

Dual

Mounting Type :

Surface Mount

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

Surface Mount :

yes

Pin Count :

6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Dual Supply Voltage :

-30V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

25A

Number of Terminations :

6

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Rise Time :

31ns

Package / Case :

6-UDFN Exposed Pad

Published :

2012

Rds On (Max) @ Id, Vgs :

29m Ω @ 6.1A, 10V

Turn On Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

FET Type :

P-Channel

Drain-source On Resistance-Max :

0.029Ohm

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 15V

Drain to Source Breakdown Voltage :

-30V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Power Dissipation :

1.7W

Continuous Drain Current (ID) :

6.1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

19 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Transistor Element Material :

SILICON