PMPB23XNE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Max Dual Supply Voltage :

20V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.022Ohm

Factory Lead Time :

8 Weeks

FET Type :

N-Channel

Terminal Form :

NO LEAD

Terminal Position :

Dual

Package / Case :

6-UDFN Exposed Pad

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1136pF @ 10V

Pulsed Drain Current-Max (IDM) :

24A

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Surface Mount :

yes

Fall Time (Typ) :

32 ns

Vgs(th) (Max) @ Id :

900mV @ 250μA

Rds On (Max) @ Id, Vgs :

22m Ω @ 7A, 4.5V

Rise Time :

20ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Turn On Delay Time :

9 ns

Gate to Source Voltage (Vgs) :

650mV

Drain Current-Max (Abs) (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

7A

Mounting Type :

Surface Mount

Published :

2012

Pin Count :

6

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Number of Terminations :

6

Turn-Off Delay Time :

31 ns

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

20V

Number of Pins :

6