PMPB215ENEA/FX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 10V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

7.6A

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

1.9A

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Series :

Automotive, AEC-Q101

Factory Lead Time :

8 Weeks

Number of Terminations :

6

Drain-source On Resistance-Max :

0.23Ohm

Reference Standard :

IEC-60134

Drain to Source Voltage (Vdss) :

80V

Rds On (Max) @ Id, Vgs :

230m Ω @ 1.9A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

NO LEAD

Surface Mount :

yes

Package / Case :

6-UDFN Exposed Pad

Input Capacitance (Ciss) (Max) @ Vds :

215pF @ 40V

Lead Free :

Lead Free

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

80V

JESD-30 Code :

S-PDSO-N6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.6W Ta

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Transistor Application :

SWITCHING

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)