PMPB20UN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

NO LEAD

Package / Case :

6-UDFN Exposed Pad

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Pin Count :

6

Reference Standard :

IEC-60134

JESD-30 Code :

S-PDSO-N6

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Published :

2012

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.025Ohm

Vgs (Max) :

±8V

Pulsed Drain Current-Max (IDM) :

27A

Drain Current-Max (Abs) (ID) :

6.6A

Surface Mount :

yes

Case Connection :

DRAIN

Power Dissipation-Max :

1.7W Ta 12.5W Tc

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

7.1nC @ 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

25m Ω @ 6.6A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

6.6A Ta

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Operating Mode :

ENHANCEMENT MODE