PMPB20ENZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Continuous Drain Current (ID) :

7.2A

Terminal Position :

Dual

Rise Time :

17ns

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 10V

Surface Mount :

yes

Turn On Delay Time :

9 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Pins :

6

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 10V

Turn-Off Delay Time :

9 ns

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0245Ohm

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

8 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Pin Count :

6

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 7A, 10V

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Package / Case :

6-UDFN Exposed Pad

Current - Continuous Drain (Id) @ 25°C :

7.2A Ta

Max Dual Supply Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Radiation Hardening :

No