PMPB20EN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Transistor Element Material :

SILICON

FET Type :

N-Channel

Terminal Position :

Dual

Radiation Hardening :

No

Number of Terminations :

6

Factory Lead Time :

8 Weeks

Number of Pins :

6

Transistor Application :

SWITCHING

Published :

2014

Package / Case :

6-UDFN Exposed Pad

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

10.8nC @ 10V

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

30V

Pin Count :

6

Drain-source On Resistance-Max :

0.0245Ohm

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn On Delay Time :

9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 7A, 10V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Turn-Off Delay Time :

9 ns

Fall Time (Typ) :

8 ns

Continuous Drain Current (ID) :

7.2A

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 10V

Rise Time :

17ns

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

7.2A Ta

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

30A

Gate to Source Voltage (Vgs) :

20V