PMPB15XPZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

12V

Drain-source On Resistance-Max :

0.019Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2875pF @ 6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

900mV @ 250μA

Package / Case :

6-UDFN Exposed Pad

Terminal Form :

NO LEAD

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

19m Ω @ 8.2A, 4.5V

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Terminal Position :

Dual

FET Type :

P-Channel

Vgs (Max) :

±12V

Number of Elements :

1

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

8.2A

Transistor Application :

SWITCHING

Published :

2012

Case Connection :

DRAIN

JESD-30 Code :

S-PDSO-N6

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta

Mounting Type :

Surface Mount

Mount :

Surface Mount

Pin Count :

6

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Reference Standard :

IEC-60134

Pulsed Drain Current-Max (IDM) :

33A

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

12V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED