PMPB15XPZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

8.2A

FET Type :

P-Channel

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2875pF @ 6V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

12V

Operating Mode :

ENHANCEMENT MODE

Reference Standard :

IEC-60134

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Package / Case :

6-UDFN Exposed Pad

Transistor Element Material :

SILICON

Number of Terminations :

6

Pin Count :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

8 Weeks

Drain-source On Resistance-Max :

0.019Ohm

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta

Published :

2012

Mount :

Surface Mount

Terminal Form :

NO LEAD

JESD-30 Code :

S-PDSO-N6

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Pulsed Drain Current-Max (IDM) :

33A

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

12V

Rds On (Max) @ Id, Vgs :

19m Ω @ 8.2A, 4.5V