PMPB15XPZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

DS Breakdown Voltage-Min :

12V

Factory Lead Time :

8 Weeks

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Rds On (Max) @ Id, Vgs :

19m Ω @ 8.2A, 4.5V

Continuous Drain Current (ID) :

8.2A

Reference Standard :

IEC-60134

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Package / Case :

6-UDFN Exposed Pad

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2875pF @ 6V

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.019Ohm

Pin Count :

6

Terminal Position :

Dual

JESD-30 Code :

S-PDSO-N6

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

900mV @ 250μA

Pulsed Drain Current-Max (IDM) :

33A

Transistor Application :

SWITCHING

Vgs (Max) :

±12V

Published :

2012

Drain to Source Voltage (Vdss) :

12V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON