PMPB15XPAX

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Mfr.Part #
PMPB15XPAX
Manufacturer
Nexperia
Package / Case
6-UDFN Exposed Pad
Datasheet
Download
Description
MOSFET P-CH 12V 8.2A DFN2020MD-6
Stock
2,975
In Stock :
2,975

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Manufacturer :
Nexperia
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
2.875nF @ 6V
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
12V
Power Dissipation-Max :
1.7W Ta 12.5W Tc
Transistor Element Material :
SILICON
Factory Lead Time :
8 Weeks
Number of Elements :
1
Series :
Automotive, AEC-Q101, TrenchMOS™
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 4.5V
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
1V @ 250μA
Rds On (Max) @ Id, Vgs :
20m Ω @ 8.2A, 4.5V
Avalanche Energy Rating (Eas) :
23.9 mJ
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Package / Case :
6-UDFN Exposed Pad
Reference Standard :
AEC-Q101; IEC-60134
Number of Terminations :
6
Current - Continuous Drain (Id) @ 25°C :
8.2A Ta
Reach Compliance Code :
Compliant
Terminal Position :
Dual
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
P-Channel
Pin Count :
6
Drain Current-Max (Abs) (ID) :
8.2A
Surface Mount :
yes
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Vgs (Max) :
±12V
Terminal Form :
NO LEAD
Drain-source On Resistance-Max :
0.02Ohm
Pulsed Drain Current-Max (IDM) :
33A
DS Breakdown Voltage-Min :
12V
JESD-30 Code :
S-PDSO-N6
Packaging :
Tape and Reel (TR)
Datasheets
PMPB15XPAX
Introducing Transistors - FETs, MOSFETs - Single Nexperia PMPB15XPAX from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:6-UDFN Exposed Pad, Number of Terminations:6, PMPB15XPAX pinout, PMPB15XPAX datasheet PDF, PMPB15XPAX amp .Beyond Transistors - FETs, MOSFETs - Single Nexperia PMPB15XPAX ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia PMPB15XPAX


P-Channel Tape & Reel (TR) 20m Ω @ 8.2A, 4.5V ±12V 2.875nF @ 6V 100nC @ 4.5V 12V 6-UDFN Exposed Pad

PMPB15XPAX Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 23.9 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2.875nF @ 6V.A device's drain current is its maximum continuous current, and this device's drain current is 8.2A.A maximum pulsed drain current of 33A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 12V.In order to operate this transistor, a voltage of 12V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (1.8V 4.5V).

PMPB15XPAX Features


the avalanche energy rating (Eas) is 23.9 mJ
based on its rated peak drain current 33A.
a 12V drain to source voltage (Vdss)


PMPB15XPAX Applications


There are a lot of Nexperia USA Inc.
PMPB15XPAX applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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