PMPB15XPAX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Reference Standard :

AEC-Q101; IEC-60134

DS Breakdown Voltage-Min :

12V

Avalanche Energy Rating (Eas) :

23.9 mJ

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Transistor Element Material :

SILICON

Terminal Position :

Dual

Number of Elements :

1

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

8.2A

Vgs (Max) :

±12V

Pulsed Drain Current-Max (IDM) :

33A

Drain to Source Voltage (Vdss) :

12V

Drain-source On Resistance-Max :

0.02Ohm

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

NO LEAD

JESD-30 Code :

S-PDSO-N6

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

FET Type :

P-Channel

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

20m Ω @ 8.2A, 4.5V

Package / Case :

6-UDFN Exposed Pad

Reach Compliance Code :

Compliant

Series :

Automotive, AEC-Q101, TrenchMOS™

Mounting Type :

Surface Mount

Pin Count :

6

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2.875nF @ 6V