PMPB15XP,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

85 ns

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Terminal Position :

Dual

FET Type :

P-Channel

Lead Free :

Lead Free

Max Dual Supply Voltage :

-12V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Surface Mount :

yes

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Pulsed Drain Current-Max (IDM) :

33A

Rise Time :

90ns

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

12V

Fall Time (Typ) :

57 ns

Continuous Drain Current (ID) :

8.2A

Terminal Finish :

Tin (Sn)

Published :

2012

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-UDFN Exposed Pad

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta

Turn On Delay Time :

18 ns

Drain-source On Resistance-Max :

0.019Ohm

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

6

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

19m Ω @ 8.2A, 4.5V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Pin Count :

6

Input Capacitance (Ciss) (Max) @ Vds :

2875pF @ 6V