PMPB12UN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Reference Standard :

IEC-60134

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Transistor Element Material :

SILICON

Pin Count :

6

DS Breakdown Voltage-Min :

20V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

18m Ω @ 7.9A, 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

7.9A Ta

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Drain-source On Resistance-Max :

0.018Ohm

Terminal Finish :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

886pF @ 10V

JESD-30 Code :

S-PDSO-N6

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Package / Case :

6-UDFN Exposed Pad

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Pulsed Drain Current-Max (IDM) :

31A

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

7.9A

Published :

2012