PMPB11EN,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

6-UDFN Exposed Pad

Max Dual Supply Voltage :

30V

FET Type :

N-Channel

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Pin Count :

6

Terminal Position :

Dual

Turn On Delay Time :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

20.6nC @ 10V

Transistor Element Material :

SILICON

Fall Time (Typ) :

9 ns

Drain Current-Max (Abs) (ID) :

9A

Lead Free :

Lead Free

Number of Channels :

1

JESD-609 Code :

e3

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

34A

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 9A, 10V

Continuous Drain Current (ID) :

9A

Surface Mount :

yes

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 10V

Power Dissipation-Max :

1.7W Ta 12.5W Tc

Turn-Off Delay Time :

17 ns

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

30V

Published :

2014

Current - Continuous Drain (Id) @ 25°C :

9A Ta