PML260SN,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Turn-Off Delay Time :

19 ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-VDFN Exposed Pad

Published :

2006

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

294m Ω @ 2.6A, 10V

Transistor Element Material :

SILICON

Number of Elements :

1

Pin Count :

8

Transistor Application :

SWITCHING

Fall Time (Typ) :

7 ns

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e4

Rise Time :

11ns

Number of Terminations :

8

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

22 mJ

FET Type :

N-Channel

Number of Pins :

8

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

200V

ECCN Code :

EAR99

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Series :

TrenchMOS™

Power Dissipation :

50W

Power Dissipation-Max :

50W Tc

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

15A

Max Dual Supply Voltage :

200V

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

657pF @ 30V

Terminal Finish :

NICKEL PALLADIUM GOLD

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

8.8A Tc

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.294Ohm

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

7 ns

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 10V

Continuous Drain Current (ID) :

8.8A

RoHS Status :

RoHS Compliant