PMF780SN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

570mA Ta

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Published :

1997

Rds On (Max) @ Id, Vgs :

920m Ω @ 300mA, 10V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.92Ohm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Terminations :

3

DS Breakdown Voltage-Min :

60V

Pin Count :

3

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 30V

HTS Code :

8541.29.00.75

Gate Charge (Qg) (Max) @ Vgs :

1.05nC @ 10V

Series :

TrenchMOS™

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Package / Case :

SC-70, SOT-323

Drain Current-Max (Abs) (ID) :

0.57A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

560mW Tc

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE