PMF780SN,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Package / Case :

SC-70, SOT-323

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

60V

Published :

1997

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Power Dissipation-Max :

560mW Tc

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 30V

Gate Charge (Qg) (Max) @ Vgs :

1.05nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Series :

TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

570mA Ta

Rds On (Max) @ Id, Vgs :

920m Ω @ 300mA, 10V

Mounting Type :

Surface Mount

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

0.57A

DS Breakdown Voltage-Min :

60V

HTS Code :

8541.29.00.75

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.92Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant