PMCM4401VNEAZ

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

12V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

335pF @ 6V

Published :

2015

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

42m Ω @ 3A, 4.5V

Drain-source On Resistance-Max :

0.054Ohm

JESD-30 Code :

S-PBGA-B4

Terminal Form :

Ball

Vgs(th) (Max) @ Id :

900mV @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

4-XFBGA, WLCSP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

12V

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Continuous Drain Current (ID) :

4.7A

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

Current - Continuous Drain (Id) @ 25°C :

4.7A Ta

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Power Dissipation-Max :

400mW Ta 12.5W Tc

Reference Standard :

IEC-60134