PMBTA56,235

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Mfr.Part #
PMBTA56,235
Manufacturer
NXP Semiconductors
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 80V 500MA SOT23
Stock
676
In Stock :
676

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Manufacturer :
NXP Semiconductors
Product Category :
Unclassified
Emitter Base Voltage (VEBO) :
5V
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
80V
Mount :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transistor Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 1V
Transition Frequency :
50MHz
Terminal Finish :
Tin (Sn)
Transistor Application :
SWITCHING
Power Dissipation :
250mW
Number of Elements :
1
Collector Emitter Breakdown Voltage :
80V
Packaging :
Tape and Reel (TR)
Max Power Dissipation :
250mW
Current - Collector Cutoff (Max) :
500nA ICBO
Number of Terminations :
3
Mounting Type :
Surface Mount
Pin Count :
3
Factory Lead Time :
4 Weeks
Collector Emitter Voltage (VCEO) :
80V
Max Collector Current :
500mA
Frequency :
50MHz
Element Configuration :
Single
Radiation Hardening :
No
Operating Temperature :
150°C TJ
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Terminal Position :
Dual
JESD-609 Code :
e3
Number of Pins :
3
Polarity/Channel Type :
PNP
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
Automotive, AEC-Q101
Base Part Number :
PMBTA56
Gain Bandwidth Product :
50MHz
Published :
2008
Datasheets
PMBTA56,235
Introducing Unclassified NXP Semiconductors PMBTA56,235 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:PMBTA56, PMBTA56,235 pinout, PMBTA56,235 datasheet PDF, PMBTA56,235 amp .Beyond Unclassified NXP Semiconductors PMBTA56,235 ,we also offer 5801925, F-631, 47480-0001, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PMBTA56,235


PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

PMBTA56,235 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

PMBTA56,235 Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz


PMBTA56,235 Applications


There are a lot of Nexperia USA Inc.
PMBTA56,235 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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