PMBTA56,235
- Mfr.Part #
- PMBTA56,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 500MA SOT23
- Stock
- 676
- In Stock :
- 676
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transition Frequency :
- 50MHz
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 250mW
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 250mW
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 500mA
- Frequency :
- 50MHz
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Base Part Number :
- PMBTA56
- Gain Bandwidth Product :
- 50MHz
- Published :
- 2008
- Datasheets
- PMBTA56,235

PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBTA56,235 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
PMBTA56,235 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
PMBTA56,235 Applications
There are a lot of Nexperia USA Inc.
PMBTA56,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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