PMBT6428,215
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- Mfr.Part #
- PMBT6428,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 100MA SOT23
- Stock
- 57,467
- In Stock ：
- 57,467
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Max Power Dissipation :
- 250mW
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Base Part Number :
- PMBT6428
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 700MHz
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Frequency :
- 700MHz
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2009
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Power Dissipation :
- 250mW
- Datasheets
- PMBT6428,215
NPN 150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBT6428,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100μA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 100mA volts.
PMBT6428,215 Features
the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PMBT6428,215 Applications
There are a lot of Nexperia USA Inc.
PMBT6428,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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