PMBT5551,235

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

180V

Frequency :

300MHz

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Collector-Base Capacitance-Max :

6pF

Number of Terminations :

3

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Number of Elements :

1

Operating Temperature :

150°C TJ

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

Number of Pins :

3

Transistor Type :

NPN

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

300MHz

Time@Peak Reflow Temperature-Max (s) :

40

VCEsat-Max :

0.2 V

Power Dissipation :

250mW

Transition Frequency :

100MHz

Pin Count :

3

Current - Collector Cutoff (Max) :

50nA ICBO

Element Configuration :

Single

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

6V

Max Power Dissipation :

250mW

Terminal Position :

Dual

Base Part Number :

PMBT5551

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

160V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Series :

Automotive, AEC-Q101

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Published :

2009

Max Collector Current :

300mA

Collector Emitter Breakdown Voltage :

160V