PMBT5551,215
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- Mfr.Part #
- PMBT5551,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 300MA SOT23
- Stock
- 2,996
- In Stock ：
- 2,996
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Operating Temperature :
- 150°C TJ
- HTS Code :
- 8541.21.00.95
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 250mW
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 300mA
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Collector-Base Capacitance-Max :
- 6pF
- Base Part Number :
- PMBT5551
- Frequency - Transition :
- 300MHz
- VCEsat-Max :
- 0.2 V
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- PMBT5551,215
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PMBT5551,215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 10mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.A 160V maximal voltage - Collector Emitter Breakdown is present in the device.
PMBT5551,215 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz
PMBT5551,215 Applications
There are a lot of Nexperia USA Inc.
PMBT5551,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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